Information for Paper ID 9329
Paper Information:
Paper Title: Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated-Mobility Fluctuation 
Student Contest: No 
Affiliation Type: Academia 
Keywords: Carrier-number fluctuation, mobility fluctuation, organic thin-film transistors (TFTs), trap density, variability. 
Abstract: In this study, a consistent analytical chargebased model for the bias-dependent variability of the drain current of organic thin-film transistors is presented. The proposed model combines both charge-carrier-numberfluctuation effects and correlated-mobility-fluctuation effects to predict the drain-current variation and is verified using experimental data acquired from a statistical population of organic transistors with various channel dimensions, fabricated on flexible polymeric substrates in the coplanar or the staggered device architecture. 
Track ID: 18 
Track Name: TEDbrief special edition (ESSDERC) 
Final Decision: Accept as Lecture 
Session Name: Device Modelling (2020 TEDbrief special edition) (Lecture)