Plenary 1  Chair: TBA

Plenary 2  Chair: TBA

IGBTs  Chair: Shigeto Honda - Mitsubishi Electric Corporation; Yi Tang - Starpower Semiconductor;

Dynamic Ron & Reliability of p-GaN Gate Technologies  Chair: Grace Xing - Cornell University; Yoshinao Miura - AIST;

ICs for High Efficiency & High Reliability  Chair: Kenji Hara - Hitachi; Nicolas Rouger - CNRS / Laplace;

SiC Advanced Novel Devices  Chair: Andrei Petru Mihaila - Hitachi ABB Power Grids; Yasuhiko Onishi - Fuji Electric;

Lateral Low Voltage Devices  Chair: Tatsuya Nishiwaki - Toshiba Electronic Devices & Storage Corporation; Hiroki Fujii - Samsung Electronics;

SiC Device Ruggedness & Reliability  Chair: Siddarth Sundaresan - GeneSiC Semiconductor; Hiroshi Kono - Toshiba Electronic Devices & Storage;

Packaging Technologies: Integrated Modeling & Design  Chair: Tomoyuki Miyoshi - Hitachi; Ichiro Omura - Kyushu Institute of Technology;

Advances on Fin-FETs & Alternative p-type Materials for GaN Devices  Chair: Jiun-Lei Yu - TSMC; Hideyuki Okita - Panasonic;

Simulation Analysis for Silicon Vertical Devices  Chair: Yuichi Onozawa - Fuji Electric; Takahiro Mori - Renesas Electronics Corp.;

Packaging Technologies: Characterization & Reliability  Chair: Alberto Castellazzi - Kyoto University of Advanced Science; Yang Xu - Tesla;

Vertical Low Voltage Devices and Late News  Chair: Takahiro Mori - Renesas Electronics Corp.; Mark Gajda - Nexperia;

IC Design  Chair: Xin Ming - University of Electronic Science and Technology;

SiC Devices & Technology  Chair: Naruhisa Miura - Mitsubishi Electric;

Low Voltage Devices & Power IC Device Technology  Chair: Riccardo Depetro - STMicroelectronics;

GaN Devices & Technology  Chair: Sameh Khalil - Infineon Technologies;

High Voltage Devices  Chair: Noriyuki Iwamuro - University of Tsukuba;

Module & Package Technologies  Chair: Wei-Chung Lo - Industrial Technology Research Institute (ITRI);