Low Voltage Devices & Power IC Device Technology Session
Session Type: Poster
Session Code: B4P-03
Location: P 01
Date & Time: Tuesday June 01, 2021 (16:10 - 17:40)
Chair: Riccardo Depetro

 

   

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My Sched		Paper
Id		TopicTitle/Author
6003 2 Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology
Wataru Saito, Shin-Ichi Nishizawa
6005 2 Robustness Enhancement of the Floating NBL BCD Architecture: Parasitics Suppression and Addition of Partially Isolated Diode for Localized Voltage Control
Moshe Agam, Jaroslav Pjenčák, Johan Janssens
6010 2 Machine-Learning Based TCAD Optimization Method for Next Generation BCD Process Development
Jaehyun Yoo, Yongwoo Jeon, Dawon Jung, Junhyuk Kim, Jisu Ryu, Uihui Kwon, Daesin Kim, Kwangtea Kim, Yongdon Kim, Kyuo...
6015 2 Low-Temperature Fabricated Amorphous Oxide Semiconductor Heterojunction Diode for Monolithic 3D Power Integration Applications
Xianda Zhou, Lei Lu, Kai Wang, Yang Liu, Johnny K.O. Sin
6029 2 A Cost Effective and Highly Manufacturable Approach to Extend a BCD 70V Technology to 200V
Weize Chen, Jaroslav Pjenčák, Moshe Agam, Johan Janssens, Rick Jerome, Santosh Menon, Mark Griswold
6048 2 Addressing the Challenges of Sub-50nm Channel LDMOS
Brendan Toner, Christoph Ellmers, Stefan Eisenbrandt, Zhengchao Liu, Darin Davis, Gary Dolny, Terry Johnson, William ...
6073 2 On Precise Current Sensors for Low Voltage Trench MOSFETs
Radim Spetik, Justin Yerger, Ladislav Seliga, Filip Kudrna, Santosh Menon, Bruce Greenwood
6093 2 An Improved Negative Transient Voltage Noise Immunity for an HVIC Using Self-Shielding Structure
Akihiro Jonishi, Masaharu Yamaji, Takahide Tanaka, Hitoshi Sumida
6115 2 Investigation on the Single-Event Burnout and Hardening of the 500V SOI Lateral-IGBT
Yiwen Qian, Wangran Wu, Guangan Yang, Jing Yang, Long Zhang, Weifeng Sun
6160 2 Reverse Recovery and Carrier Lifetime in Body Diodes of LDMOS Transistors
Vin Loong Choo, Martin Pfost, Jörg Gessner, Klaus Heinrich, Uwe Eckoldt, Madelyn Liew, Yang Hao
6196 2 Figure-of-Merit for Laterally Diffused MOSFETs with Rectangular and Semi-Circular Field Oxides
Ali Saadat, Maarten Van de Put, Hal Edwards, William Vandenberghe
6199 2 Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation
Kanako Komatsu, Koichi Ozaki, Fumio Takeuchi, Daisuke Shinohara, Tomoko Kinoshita, Yoshiaki Ishii, Toshihiro Sakamoto...