Si and Wide Bandgap Switch Performance Session
Session Type:
Lecture
Session Code:
IS04
Location:
R06
Date & Time:
Tuesday March 17, 2020 (08:30 - 11:55)
Chair:
Jaume Roig,
Stephanie Watts Butler
Papers are listed in the order they will be presented.
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Paper
Id
Topic
Title/Author
3549
1
SiC MOSFET Corner and Statistical SPICE Model Generation
James Victory, Canzhong He, Yunpeng Xiao, Herbert De Vleeschouwer, Elvis Zeng, Zhiping Hu
3550
1
Power Conversion Switch technology: the who, When , Where and Why of Using Si, SiC and GaN Transistors
Peter Friedrichs
3541
1
The Path Forward for GaN Power
Alex Lidow
3551
1
200-mm GaN-On-Silicon Intelligent Power Solutions to Boost Performance of a New Generation of Power Converters
Eric Moreau
3552
1
Advances Through Innovation: Transphorm Changes the Game with Gen-IV SuperGaNTM 650V GaN Platform
Yifeng Wu
3553
1
Rugged, High-Performance 650 –1200V SiC MOSFETs with Flawless Gate Oxide Integrity
Martin Domeij, Fredrik Allerstam, Thomas Neyer
3554
1
Use of 3300V SiC MOSFETs and 1700 V SiC Diodes in Modern Applications
Ranbir Singh, Sumit Jadav, Vamsi Mulpuri, Siddarth Sundaresan