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Si and Wide Bandgap Switch Performance Session |
Session Type: | Lecture |
Session Code: | IS04 |
Location: | R06 |
Date & Time: | Tuesday March 17, 2020 (08:30 - 11:55) |
Chair: | Jaume Roig, Stephanie Watts Butler |
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Papers are listed in the order they will be presented.
Paper Id | Topic | Title/Author |
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3549 |
1 |
SiC MOSFET Corner and Statistical SPICE Model Generation James Victory, Canzhong He, Yunpeng Xiao, Herbert De Vleeschouwer, Elvis Zeng, Zhiping Hu |
3550 |
1 |
Power Conversion Switch technology: the who, When , Where and Why of Using Si, SiC and GaN Transistors Peter Friedrichs |
3541 |
1 |
The Path Forward for GaN Power Alex Lidow |
3551 |
1 |
200-mm GaN-On-Silicon Intelligent Power Solutions to Boost Performance of a New Generation of Power Converters Eric Moreau |
3552 |
1 |
Advances Through Innovation: Transphorm Changes the Game with Gen-IV SuperGaNTM 650V GaN Platform Yifeng Wu |
3553 |
1 |
Rugged, High-Performance 650 –1200V SiC MOSFETs with Flawless Gate Oxide Integrity Martin Domeij, Fredrik Allerstam, Thomas Neyer |
3554 |
1 |
Use of 3300V SiC MOSFETs and 1700 V SiC Diodes in Modern Applications Ranbir Singh, Sumit Jadav, Vamsi Mulpuri, Siddarth Sundaresan |
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